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| JMnic Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220C package High breakdown voltage and high reliability Fast switching speed. Wide ASO (Safe Operating Area) APPLICATIONS 800V/3A switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC3457 Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 1100 800 7 3 10 1.5 50 150 -55~150 ae ae UNIT V V V A A A W JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=5mA ; RBE= IC=1mA ; IE=0 IE=1mA ; IB=0 IC=1.5A; IB=0.3A IC=1.5A; IB=0.3A VCB=800V ;IE=0 VEB=5V; IC=0 IC=0.2A ; VCE=5V IC=1A ; VCE=5V IC=0.2A ; VCE=10V f=1MHz ; VCB=10V 10 8 15 60 MIN 800 1100 7 TYP. 2SC3457 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB MAX UNIT V V V 2.0 1.5 10 10 40 |I |I V V A A MHz pF Switching times ton tstg tf Turn-on time Storage time Fall time VCC=400V; IC=2A IB1=0.4A;IB2=-0.8A; RL=200| 0.5 3.0 0.3 |I |I |I s s s hFE-1 classifications K 10-20 L 15-30 M 20-40 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3457 Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 JMnic Product Specification Silicon NPN Power Transistors 2SC3457 4 |
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